Language:en 
- zh-cn
- en
- ja
- fr
- ko
- de
- pt-pt
- es
BEYOND CIRCUIT
| Model： | GT065P06D5 |
|---|---|
| Product Category： | Single FETs, MOSFETs |
| Manufacturer： | Goford Semiconductor |
| Description： | MOSFET P-CH 60V |
| Encapsulation： | - |
| Package： | Tape & Reel (TR) |
| RoHS Status： | 1 |
|
Obtain quotation information
|
Quantity
Price
Total Price
1
$1.4900
$1.4900
10
$1.2400
$12.4000
100
$0.9800
$98.0000
500
$0.8300
$415.0000
1000
$0.7100
$710.0000
2000
$0.6700
$1,340.0000
5000
$0.6500
$3,250.0000
10000
$0.6300
$6,300.0000
| TYPE | DESCRIPTION |
| Mfr | Goford Semiconductor |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| Power Dissipation (Max) | 178W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5326 pF @ 30 V |
